NT5CB128M16JR-FL LPDDR3 原装
Commercial and Industrial DDR3(L) 2Gb SDRAM
NT5CB128M16JR-FL LPDDR3 原装的技术参数：
|
制造商 |
NANYA Technology |
|
封装 |
FBGA- |
|
存储类型 |
DDR3 SDRAM |
|
Interface & Power(VDD&VDDQ) |
SSTL_15 (1.5V,1.5V) |
|
框架 |
128Mbx16 |
|
无铅/环保 |
无铅/环保 |
|
电压(伏) |
1.5 V |
|
温度规格 |
0°C to +95°C |
|
速度 |
1066 MHZ |
|
针脚数 |
96 PIN |
|
ECCN |
EAR99 |
NT5CB128M16JR-FL LPDDR3 原装的描述：
The 2Gb Double-Data-Rate-3 (DDR3(L)) is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.
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