NT5CB128M16IP-EK DDR3 SDRAM
Commercial, Industrial and Automotive DDR3 2Gb SDRAM
NT5CB128M16IP-EK DDR3 SDRAM的技术参数：
封装
FBGA-
存储容量
2Gbit
无铅/环保
无铅/环保
电压(伏)
1.5 V
温度规格
0°C~+95°C
速度
933 MHZ
组织
128Mx16
针脚数
96
Density
2Gb
Nanya Designator
NT
Grade
Commercial Grade
Interface And Power
SSTL_15 (1.5V, 1.5V)
NT5CB128M16IP-EK DDR3 SDRAM的技术参数：
The 2Gb Double-Data-Rate-3 DDR3 is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAMs.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 banks or 16Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 1866 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling).
All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages
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