深圳市迅丰达电子科技有限公司

NT5CB256M16DP-EK DDR3 原装

NT5CB256M16DP-EK DDR3 原装 的描述：

The 4Gb Double-Data-Rate-3 DDR3 DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks.

Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067V/+0.1V power supply and are available in BGA packages.

NT5CB256M16DP-EK DDR3 原装的技术参数：