NT5TU64M16HG-AC 原装 DDR2
Commercial, Industrial and Automotive DDR2 1Gb SDRAM
NT5TU64M16HG-AC 原装 DDR2 的技术参数：
|
类别 |
DDR SDRAM |
|
制造商 |
Nanya Technology |
|
存储器构架(格式) |
SDRAM DDR2 |
|
存储容量 |
1Gbit |
|
组织 |
64MX16 |
|
工作电压 |
1.8 V |
|
接口和电源 |
SSTL_ 18 (1.8V, 1.8V) |
|
工作温度 |
-40℃~+95℃ |
|
时钟频率 |
400 MHZ |
|
速率 |
800Mbps |
|
外包装 |
TRAY |
|
包装量 |
2090 |
|
封装 |
84-Ball VFBGA |
NT5TU64M16HG-AC 原装 DDR2 的描述：
The 1Gb DDR2 SDRAM is a high-speed CMOS, dynamic random-access memory containing 1,073,741,824 bits.
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for the burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Activate command, which is followed by a Read or Write command.
The address bits registered coincident with the activate command are used to select the bank and row to be accesses (BA0-BA2 select the bank, A0-A13 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst access and to determine if the Auto-Precharge command is to be issued.
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