H9HCNNN8KUMLHR-NLE 原装LPDDR4
H9HCNNN8KUMLHR-NLE 原装LPDDR4的技术参数：
|
容量 |
8GB |
|
电压(VDD1 / VDD2 / VDDQ) |
1.8V / 1.1V / 1.1V |
|
速率 |
3200Mbps |
|
封装 |
FBGA-200 Ball |
|
温度规格 |
-25~85C |
H9HCNNN8KUMLHR-NLE 原装LPDDR4的特征：
VDD1 = 1.8V (1.7V to 1.95V)
VDD2, VDDCA and VDDQ = 1.1V (1.06V to 1.17V)
VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI)
Single data rate architecture for command and address
All control and address latched at rising edge of the clock
Double data rate architecture for data Bus
two data accesses per clock cycle
Differential clock inputs (CK_t, CK_c)
Bi-directional differential data strobe (DQS_t, DQS_c)
Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c)
DMI pin support for write data masking and DBIdc functionality
Programmable RL (Read Latency) and WL (Write Latency)
Burst length: 16 (default), 32 and On-the-fly
On the fly mode is enabled by MRS
Auto refresh and self refresh supported
All bank auto refresh and directed per bank auto refresh supported
Auto TCSR (Temperature Compensated Self Refresh)
PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask
Background ZQ Calibration
H9HCNNN8KUMLHR-NLE 原装LPDDR4的描述：
SK Hynix海力士
主要生产的产品有用于个人电脑、笔记本电脑的DRAM、数据中心的大容量服务器用的服务器DRAM、各种低功耗便携式设备如智能手机等的行动式DRAM、能高速处理大量数据，用于图形数据处理的图像处理DRAM、各种数字设备操作所需的消费类DRAM等。
SKhynix广泛的低功耗DRAM组合，包括LPDDR4和LPDDR4X，不仅适用于智能手机，也适用于消费电子产品，从数码相机到便携式游戏和导航设备，甚至汽车信息娱乐和先进的驱动辅助系统。
LPDDR4和LPDDR4X有一个多功能的双通道封装，模具密度从4到24gb，可以选择和配置以满足每个客户的需求。
通过更节能的I/O操作，LPDDR4X只能运行LPDDR4所需的55%的能源——实现45%的节能。
询价
