H57V2562GTR-75C 原装 SDRAM
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
H57V2562GTR-75C 原装 SDRAM的技术参数：
|
制造商 |
SK Hynix |
|
存储器构架(格式) |
DRAM |
|
存储器容量 |
256Mb (16M x 16) |
|
工作电压 |
3V ~ 3.6V |
|
存储器类型 |
Volatile |
|
时钟频率 |
133MHz |
|
封装/箱体 |
54 Pin TSOPII 400mil x 875mil 0.8mm pin pitch |
|
环境温度（度） |
0 to 70 |
|
存储温度（度） |
-55 to 125 |
H57V2562GTR-75C 原装 SDRAM 的描述：
The Hynix H57V2562GTR Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304 x 16 I/O.
Synchronous DRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Synchronous DRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16 Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK. The Synchronous DRAM provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page.
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