H5AN8G6NAFR-UHC 原装 DDR4
8Gb DDR4 SDRAM Lead-Free&Halogen-Free (RoHS Compliant)
|
脚位/封装 |
FBGA |
|
外包装 |
TRAY |
|
无铅/环保 |
无铅/环保 |
|
电压(伏) |
1.2V |
|
温度规格 |
0°C~+95°C |
|
速度 |
1200 MHZ |
|
标准包装数量 |
1600 |
|
Number Of Words |
512M |
|
Bit Organization |
x16 |
|
Density |
8G |
|
Operating Temperature |
commercial temperature(0°C ~ 85°C) & normal power |
|
Package Material |
lead & halogen free(ROHS compliant) |
|
Hynix Memory |
H |
|
Die Generation |
2nd |
|
No Of Banks |
Non-TSV |
|
Product Family |
DRAM |
|
Shipping Method |
tray |
The H5AN8G4NAFR-xxC, H5AN8G8NAFR-xxC and H5AN8G6NAFR-xxC are a 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 8Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
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