MT41K64M16TW-107 IT:J 原装 LPDDR3
动态随机存取存储器 DDR3 1G 64MX16 FBGA
SDRAM - DDR3L 存储器 IC 1Gb（64M x 16） 并联 933 MHz 20 ns 96-FBGA（8x14）
MT41K64M16TW-107 IT:J 原装 LPDDR3 的技术参数：
制造商:
Micron Technology
产品种类:
动态随机存取存储器
RoHS:
是
类型:
SDRAM - DDR3L
安装风格:
SMD/SMT
封装 / 箱体:
FBGA-96
数据总线宽度:
16 bit
存储容量:
1 Gbit（64 M x 16）
（max）时钟频率:
933 MHz
电源电压:
1.283 V to 1.45 V
电源电流（max）：
63 mA
工作温度:
- 40 C to + 95 C
封装:
Tray
商标:
Micron
湿度敏感性:
Yes
产品类型:
DRAM
MT41K64M16TW-107 IT:J 原装 LPDDR3 的描述：
DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins.
The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK.
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