MT47H64M16NF-25E:M 原装 DDR2
动态随机存取存储器 DDR2 1G 64MX16 FBGA
MT47H64M16NF-25E:M 原装 DDR2 的技术参数：
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制造商: |
Micron Technology |
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产品种类: |
动态随机存取存储器 |
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RoHS: |
是 |
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类型: |
SDRAM - DDR2 |
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安装风格: |
SMD/SMT |
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封装 / 箱体: |
FBGA-84 |
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数据总线宽度: |
16 bit |
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存储容量: |
1 Gbit（64 M x 16） |
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（max）时钟频率: |
400 MHz |
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访问时间: |
400 ps |
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电源电压-: |
1.7 V to 1.9 V |
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电源电流（max）: |
95 mA |
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工作温度: |
0 C to + 85 C |
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封装: |
Tray |
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商标: |
Micron |
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湿度敏感性: |
Yes |
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产品类型: |
DRAM |
MT47H64M16NF-25E:M 原装 DDR2 的描述：
The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
A bidirectional data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR2 SDRAM during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 offering has two data strobes, one for the lower byte (LDQS, LDQS#) and one for the upper byte (UDQS,UDQS#).
询价
