H9HCNNNBPUMLHR-NMO 原装 LPDDR4
|
脚位/封装 |
FBGA-200 |
|
|
制造商 |
SK HYNIX/海力士 |
|
|
组织 |
1GX16 |
|
|
无铅/环保 |
无铅/环保 |
|
|
电压(伏) |
1.1 V |
|
|
温度规格 |
-40°C~+105°C |
|
|
速度 |
1866 MHz |
|
|
Dram Voltage |
1.1V/1.1V,LPDDR4 |
|
|
Nvm Option |
None |
|
|
Dram Density |
16Gb, QDP, 2Ch, 2CS |
|
|
Nvm Speed |
none |
|
|
Package Material |
Lead & Halogen Free |
|
|
Hynix Memory |
H |
|
|
Product Mode |
LPDDR4 Only |
|
|
Generation |
1s |
|
热门现货，原厂原装 有需求联系我们
MT29F64G08CBABBWPR:B 10000 TSOP 21+22+ MICRON/美光
KLMBG2JETD-B041 10000 BGA 21+22+ SAMSUNG/三星
KLMAG1JETD-B041 10000 BGA 21+22+ SAMSUNG/三星
KLM8G1GETF-B041 10000 BGA 21+22+ SAMSUNG/三星
KLM4G1FETE-B041 10000 BGA 21+22+ SAMSUNG/三星
K4E8E324EB-EGCF 10000 BGA 21+22+ SAMSUNG/三星
K4E6E304EB-EGCF 10000 BGA 21+22+ SAMSUNG/三星
K4E6E304EC-EGCG 10000 BGA 21+22+ SAMSUNG/三星
K4B4G1646E-BCNB 10000 BGA 21+22+ SAMSUNG/三星
K4A8G165WB-BCRC 10000 BGA 21+22+ SAMSUNG/三星
H9HCNNNCPMMLXR-NEE 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNNCPMALHR-NEE 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNNBPUMLHR-NMO 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNNBPUMLHR-NMN 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNNBKUMLHR-NME 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNNBKMALHR-NEE 10000 BGA 21+22+ SK HYNIX/海力士
H9HCNNN8KUMLHR-NLN 10000 BGA 21+22+ SK HYNIX/海力士
H9CCNNNCPTALBR-NUD 10000 BGA 21+22+ SK HYNIX/海力士
H9CCNNNBKTALBR-NUD 10000 BGA 21+22+ SK HYNIX/海力士
H9CCNNNBJTALAR-NUD 10000 BGA 21+22+ SK HYNIX/海力士
H9CCNNN8GTALAR-NUD 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ4G83EFR-RDC 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ4G63EFR-TEC 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ4G63EFR-RDC 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ4G63CFR-RDC 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ2G83GFR-RDC 10000 BGA 21+22+ SK HYNIX/海力士
H5TQ2G63GFR-TEC 10000 BGA 21+22+ SK HYNIX/海力士
H5TC4G63EFR-RDA 10000 BGA 21+22+ SK HYNIX/海力士
H5TC2G83GFR-PBA 10000 BGA 21+22+ SK HYNIX/海力士
H5TC2G63GFR-PBA 10000 BGA 21+22+ SK HYNIX/海力士
询价
