The H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC and H5AN4G6NBJR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
|
脚位/封装 |
FBGA-96 |
|
外包装 |
TRAY |
|
无铅/环保 |
无铅/环保 |
|
电压(伏) |
1.2V |
|
温度规格 |
0°C~+95°C |
|
速度 |
1200 MHZ |
|
Number Of Words |
256M |
|
Bit Organization |
x16 |
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Density |
4G |
|
工作温度 |
0°C ~ 85°C |
|
Package Material |
lead & halogen free(ROHS compliant) |
|
Hynix Memory |
H |
|
Die Generation |
3rd |
|
No Of Banks |
Non-TSV |
|
Product Family |
DRAM |
询价
