K4A8G165WC-BCTD0CV 原装 DDR4
High-performing memory empowers faster, powerful solutions.
Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
Easily processing massive workloads with enhanced speed,the DDR4 transfers more data faster than ever before,offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3,200 Mbps bandwidth and 1 TB/s system memory
amsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO. The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
K4A8G165WC-BCTD0CV 原装 DDR4的技术参数：
|
制造商 |
SAMSUNG |
|
架构 |
512M*16 |
|
容量 |
8GB |
|
温度 |
0~85°C |
|
速度 |
2666 Mbps |
|
工作电压 |
1.2v |
|
封装 |
FBGA-96 |
|
外包装 |
TRAY |
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