K4A8G045WB-BCRC 原装 DDR4
8Gb B-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V
K4A8G045WB-BCRC 原装 DDR4 的技术参数：
|
制造商 |
SAMSUNG |
|
架构 |
2G x 4 |
|
容量 |
8GB |
|
温度 |
0~85°C |
|
速度 |
2400Mbps |
|
工作电压 |
1.2v |
|
封装 |
FBGA-78 |
K4A8G045WB-BCRC 原装 DDR4 的描述：
The 8Gb DDR4 SDRAM B-die is organized as a 128Mbit x 4 I/Os x 16banks or 64Mbit x8 I/Os x 16banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applications.
The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply and 1.2V (1.14V~1.26V).
The 8Gb DDR4 B-die device is available in 78ball FBGAs(x4/x8).
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