原装 K4E6E304EC-EGCG LPDDR3
16Gb DDP LPDDR3 SDRAM 512M x32 (32M x32 x 8banks) 178FBGA, 11x11.5
原装 K4E6E304EC-EGCG LPDDR3 的封装图
原装 K4E6E304EC-EGCG LPDDR3 的技术参数:
制造商 ：SAMSUNG
电压 ： 1.8 / 1.2 / 1.2 V
组织：512M*32
温度规格 ：-25°C~+85°C
速度 ：2133Mbps
存储格式 ：DRAM
安装类型 ：表面贴装
容量 ：16G
封装 ：FBGA-178
原装 K4E6E304EC-EGCG LPDDR3 的 特征：
• Double-data rate architecture; two data transfers per clock cycle
• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver
• Differential clock inputs (CK_t and CK_c)
• Differential data strobes (DQS_t and DQS_c)
• Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS
• 8 internal banks for concurrent operation
• Data mask (DM) for write data
• Burst Length: 8
• Burst Type: Sequential
• Read & Write latency : Refer to Table 45 LPDDR3 AC Timing Table
• Auto Precharge option for each burst access
• Configurable Drive Strength
• All Bank Refresh, Per Bank Refresh and Self Refresh
• Partial Array Self Refresh and Temperature Compensated Self Refresh
• Write Leveling
• CA Calibration
• HSUL_12 compatible inputs
• VDD1/VDD2/VDDQ/VDDCA: 1.8V/1.2V/1.2V / 1.2V
• No DLL : CK to DQS is not synchronized
• Edge aligned data output, center aligned data input
• Operating Temperature : -25 ~ 85°C
• On Die Termination using ODT pin\
• 2/CS, 2CKE
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