相关证件: 
会员类型:
会员年限:3年
K4B4G0446D-BCK0 原装 DDR3
The 4Gb DDR3 SDRAM D-die is organized as a 128Mbit x 4 I/Os x 8banks or 64Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3- 2133) for general applications
制造商 |
SAMSUNG |
速度 |
1866 Mbps |
电源电压 |
1.35 V |
温度规格 |
0 ~ 85 °C |
产品类型 |
DDR3 SDRAM |
容量 |
4 GB |
架构 |
1G x 4 |
封装 |
FBGA-78 |
KMGX6001BA-B514
KMGP6001BA-B514
KMFN60012M-B214
KMDX60018M-B425
KLMDG8JENB-B041
KLMCG4JETD-B041
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K9F1G08U0E-SIB0
K4Z80325BC-HC14
K4G80325FC-HC25
K4E8E324ED-EGCG
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304ED-EGCG
K4E6E304EC-EGCG
K4E6E304EC-EGCF
K4B4G1646E-BYMA
K4B4G1646E-BYK0
K4B4G1646E-BCNB
K4E8E324EB-AGCF
K4B4G0846E-BYMA
K4AAG165WA-BCWE
K4AAG165WA-BCTD
K4A8G165WC-BCTD
K4A8G165WC-BCRC
K4A8G165WB-BCRC
K4A4G165WF-BCTD
K4A4G165WE-BCRC
KLMBG2JETD-B041
KLMAG1JETD-B041
KLM8G1GETF-B041
KLM4G1FETE-B041
K4E8E324EB-EGCF
K4E6E304EB-EGCF
K4E6E304EC-EGCG
K4B4G1646E-BCNB
K4A8G165WB-BCRC