MT47H64M16NF-25 E IT:M 原装DDR2
丝印代码：D9RZT
The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM effectively consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is internally configured as a multibank DRAM.
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制造商 |
MICRON |
|
存储器类型 |
易失 |
|
存储器格式 |
DRAM |
|
技术 |
SDRAM - DDR2 |
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存储容量 |
1Gb（64M x 16） |
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存储器接口 |
并联 |
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时钟频率 |
400MHz |
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电压 - 供电 |
1.7V ~ 1.9V |
|
工作温度 |
-40°C ~95°C（TC） |
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访问时间 |
400 ps |
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安装类型 |
表面贴装型 |
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封装/外壳 |
FBGA-84 |
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供应商器件封装 |
84-ball FBGA,8*12.5 |
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MTFC8GAKAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-4MIT |
MICRON/镁光 |
|
MTFC4GACAJCN-1MWT |
MICRON/镁光 |
|
MT53E256M32D2DS-053WT:B |
MICRON/镁光 |
|
MT53D512M64D4HR-053WT:D |
MICRON/镁光 |
|
MT53D512M32D2DS-053WT:D |
MICRON/镁光 |
|
MT52L512M32D2PF-107WT:B |
MICRON/镁光 |
|
MT52L256M32D1PF-107WT:B |
MICRON/镁光 |
|
MT41K64M16TW-107:J |
MICRON/镁光 |
|
MT41K64M16TW-107IT:J |
MICRON/镁光 |
|
MT41K512M8DA-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107:P |
MICRON/镁光 |
|
MT41K256M16TW-107IT:P |
MICRON/镁光 |
|
MT41K256M16TW-107AIT:P |
MICRON/镁光 |
|
MT41K128M16JT-125:K |
MICRON/镁光 |
|
MT41K128M16JT-125IT:K |
MICRON/镁光 |
|
MT40A512M16LY-075:E |
MICRON/镁光 |
|
MT29F64G08CBABBWPR:B |
MICRON/镁光 |
|
MT29F4G08ABAEAWP:E |
MICRON/镁光 |
|
MT29F2G08ABAGAWP-IT:G |
MICRON/镁光 |
|
MT29F2G08ABAEAWP-IT:E |
MICRON/镁光 |
|
MT29F2G08ABAEAWP:E |
MICRON/镁光 |
|
MT29F2G08ABAEAH4:E |
MICRON/镁光 |
|
MT29F2G01ABAGDWB-IT:G |
MICRON/镁光 |
|
MT53D512M64D4HR-053 WT:D |
MICRON/镁光 |
询价
