W9864G6KH-6 原装 SDRAM 的描述：
W9864G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words ′ 4 banks ′ 16 bits. W9864G6KH delivers a data bandwidth of up to 200M words per second.
For different application, W9864G6KH is sorted into the following speed grades: -5, -6, -6I and -7. The -5 grade parts can run up to 200MHz/CL3. The -6 and -6I grade parts can run up to 166MHz/CL3 (the -6I industrial grade which is guaranteed to support -40°C ~ 85°C).
The -7 grade parts can run up to 143MHz/CL3 and with tRP = 18nS. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command.
Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9864G6KH is ideal for main memory in high performance applications.
W9864G6KH-6 原装 SDRAM 的技术参数：
制造商 | Winbond |
产品种类 | 动态随机存取存储器 |
类型 | SDRAM |
安装风格 | SMD/SMT |
封装 / 箱体 | TSOP-54-10.2mm |
数据总线宽度 | 16 bit |
存储容量 | 64 Mbit |
(MAX)时钟频率 | 166 MHz |
存储器接口 | 并联 |
存储器类型 | 易失 |
存储器组织 | 4M x 16 |
访问时间 | 5 ns |
电压 - 供电 | 3V ~ 3.6V |
工作温度 | 0°C ~ 70°C（TA） |
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