MT40A512M16LY-075:E 全新原装 DDR4 存储IC
制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | FBGA-96 |
数据总线宽度 | 16 bit |
存储容量 | 8 Gbit |
（max）时钟频率 | 1333 MHz |
电源电压 | 1.14 V to 1.26 V |
电源电流（max） | 100 mA |
工作温度 | 0 C to + 95 C |
系列 | MT40A |
湿度敏感性 | Yes |
? VDD = VDDQ = 1.2V ±60mV
? VPP = 2.5V, –125mV/+250mV
? On-die, internal, adjustable VREFDQ generation
? 1.2V pseudo open-drain I/O
? TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
? 16 internal banks (x4, x8): 4 groups of 4 banks each
? 8 internal banks (x16): 2 groups of 4 banks each
? 8n-bit prefetch architecture
? Programmable data strobe preambles
? Data strobe preamble training
? Command/Address latency (CAL)
? Multipurpose register READ and WRITE capability
? Write leveling
? Self refresh mode
? Low-power auto self refresh (LPASR)
? Temperature controlled refresh (TCR)
? Fine granularity refresh
? Self refresh abort
? Maximum power saving
? Output driver calibration
? Nominal, park, and dynamic on-die termination(ODT)
? Data bus inversion (DBI) for data bus
? Command/Address (CA) parity
? Databus write cyclic redundancy check (CRC)
? Per-DRAM addressability
? Connectivity test
? sPPR and hPPR capability
? JEDEC JESD-79-4 compliant
MT29F64G08CBABAWP固带 10K 23+
KLM8G1GETF-B041 10K 23+
KLMBG2JETD-B041 10K 23+
KLMAG1JETD-B041 10K 23+
K4E6E304EC-EGCG 10K 23+
K4B4G1646E-BCNB 10K 23+
K4F6E3S4HM-MGCJ 10K 23+
K4AAG165WA-BCWE 10K 23+
K4B4G0846E-BCNB 10K 23+
H5TC4G83BFR-PBA 95 17+
H26M41204HPR 5 20+
SDTNRGAMA-008G 35 21+
K4UBE3D4AA-MGCL 10K 23+
K4UBE3D4AB-MGCL 10K 23+
K4U6E3S4AA-MGCR 10K 23+
优势出，有需要的欢迎联系
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