MT41K128M16JT-125:K 全新 LPDDR3 D9PTK
制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | FBGA-96 |
系列 | MT41K |
湿度敏感性 | Yes |
? VDD = VDDQ = 1.35V (1.283–1.45V)
? Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
? Differential bidirectional data strobe
? 8n-bit prefetch architecture
? Differential clock inputs (CK, CK#)
? 8 internal banks
? Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
? Programmable CAS (READ) latency (CL)
? Programmable posted CAS additive latency (AL)
? Programmable CAS (WRITE) latency (CWL)
? Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
? Selectable BC4 or BL8 on-the-fly (OTF)
? Self refresh mode
? TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
? Self refresh temperature (SRT)
? Automatic self refresh (ASR)
? Write leveling
? Multipurpose register
? Output driver calibration
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