NT5CB256M16DP-EK 全新原装 DDR3
制造商 | Nanya Technology Corp. |
电压 | 1.35V |
封装 / 箱体 | 96-ball VFBGA |
温度范围 | 0°C to 95°C |
容量 | 4Gb |
组织 | 256Mx16 |
速度 | 933MHz |
产品种类 | DDR3(L) SDRAM |
JEDEC DDR3 Compliant
-8n Prefetch Architecture
-Differential Clock(CK/CK)and Data Strobe(DQS/DQS)
-Double-data rate on DQs, DQSandDM
lData Integrity
-AutoSelf Refresh (ASR)by DRAM built
-inTS-Auto Refreshand Self Refresh Modes
Power Saving Mode
-Partial Array Self Refresh (PASR)1
-Power Down Mode
Signal Integrity
-Configurable DS for system compatibility
-ConfigurableOn-Die Termination
-ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ±1%) l
Signal Synchronization
-Write Leveling via MR settings6
-Read Leveling via MPR
Interface and Power Supply
-SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)
-SSTL_1353for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V)
MT29F64G08CBABAWP固带 10K 23+
KLM8G1GETF-B041 10K 23+
KLMBG2JETD-B041 10K 23+
KLMAG1JETD-B041 10K 23+
K4E6E304EC-EGCG 10K 23+
K4B4G1646E-BCNB 10K 23+
K4F6E3S4HM-MGCJ 10K 23+
K4AAG165WA-BCWE 10K 23+
K4B4G0846E-BCNB 10K 23+
K4UBE3D4AA-MGCL 10K 23+
K4UBE3D4AB-MGCL 10K 23+
K4U6E3S4AA-MGCR 10K 23+
全新原包原装可含税（香港可交）
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