K4B2G0846F-BCMA 全新原装 DDR3
制造商 | SAMSUNG |
RoHS | 是 |
容量 | 2Gb F-die |
工作电压 | 1.5V |
封装 / 箱体 | 78-Pin FBGA |
速率 | 1866 Mbps |
工作温度 | 0 ~ 85 °C |
组织 | 256M x 8 |
生产状态 | 停产 |
产品种类 | DDR3 SDRAM |
1. JEDEC standard 1.5V ± 0.075V Power Supply?VDDQ = 1.5V ± 0.075V
2. 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,933MHz fCK for 1866Mb/sec/pin, 1066MHz fCK for 2133Mb/sec/pin
3. 8 Banks
4. Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13,14
5. Programmable Additive Latency: 0, CL-2 or CL-1 clock
6. Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600),9(DDR3-1866) and 10(DDR3-2133)
7. 8-bit pre-fetch
8. Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
9. Bi-directional Differential Data-Strobe
10. Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
11. On Die Termination using ODT pin
12. Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
13. Asynchronous Reset
14. Package : 78 balls FBGA - x8
15. All of Lead-Free products are compliant for RoHS
16. All of products are Halogen-fre
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全新原包原装可含税（香港可交）
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