MT46V64M8CY-5B:J TR 全新原装 DDR
制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
RoHS | 是 |
数据总线宽度 | 8 bit |
安装风格 | SMD/SMT |
封装 / 箱体 | FBGA-60 |
存储容量 | 512 Mbit |
（max）时钟频率 | 200 MHz |
电源电压 | 2.5 V to 2.7 V |
电源电流（max） | 85 mA |
工作温度 | 0 C to + 70 C |
系列 | MT46V |
湿度敏感性 | Yes |
? VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V
VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V (DDR400)1
? Bidirectional data strobe (DQS) transmitted /received with data, i.e., source-synchronous data capture (x16 has two – one per byte)
? Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
? Differential clock inputs (CK and CK#)
? Commands entered on each positive CK edge
? DQS edge-aligned with data for READs; centeraligned with data for WRITEs
? DLL to align DQ and DQS transitions with CK
? Four internal banks for concurrent operation
? Data mask (DM) for masking write data (x16 has two – one per byte)
? Programmable burst lengths: 2, 4, or 8
? Auto refresh– 64ms, 8192-cycle
? Longer-lead TSOP for improved reliability (OCPL)
? 2.5V I/O (SSTL_2 compatible)
? Concurrent auto precharge option is supported
? tRAS lockout supported (tRAP = tRCD)
优势出，有需要的欢迎联系
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