K4T1G084QJ-BCF7 原装全新DDR2
制造商 | SAMSUNG |
组织 | 128 x 8M |
类别 | DRAM动态随机存储器 |
容量 | 1 GB |
RoHS | 是 |
封装 / 箱体 | FBGA-60 |
产品种类 | DDR2 SDRAM |
JEDEC standard VDD = 1.8V ± 0.1V Power Supply
VDDQ = 1.8V ± 0.1V
333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin,533MHz fCK for 1066Mb/sec/pin
8 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6, 7
Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5, 6
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
Support Industrial Temp (-40~90°C)
-tREFI 7.8us at -40°C < TCASE < 85°C
-tREFI 3.9us at 85°C < TCASE < 95°C
All of products are Lead-Free, Halogen-Free, and RoHS compliant
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