制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
安装风格 | SMD/SMT |
数据总线宽度 | 8 bit |
存储容量 | 16 Gbit |
（max）时钟频率 | 1600 MHz |
电源电压（max） | 1.2 V |
工作温度 | - 40 C to + 95 C |
VDD = VDDQ = 1.2V ±60mV
VPP = 2.5V, –125mV, +250mV
On-die, internal, adjustable VREFDQ generation
1.2V pseudo open-drain I/O
TC maximum up to 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
16 internal banks (x4, x8): 4 groups of 4 banks each
8 internal banks (x16): 2 groups of 4 banks each
8n-bit prefetch architecture
Programmable data strobe preambles
Data strobe preamble training
Command/Address latency (CAL)
Multipurpose register READ and WRITE capability
Write leveling
Self refresh mode
Low-power auto self refresh (LPASR)
Temperature controlled refresh (TCR)
Fine granularity refresh
Self refresh abort
Maximum power saving
Output driver calibration
Nominal, park, and dynamic on-die termination
(ODT)
Data bus inversion (DBI) for data bus
Command/Address (CA) parity
Databus write cyclic redundancy check (CRC)
Per-DRAM addressability
Connectivity test
JEDEC JESD-79-4 compliant
sPPR and hPPR capability
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