NT5CC256M8IN-DI 全新原装 DDR3
制造商 | NANYA |
类别 | DRAM动态随机存储器 |
RoHS | 是 |
容量 | 2Gb |
封装 / 箱体 | 78-Ball FBGA 8.00 x 10.50 |
DRAM 类型 | DDR3(L) SDRAM |
架构 | 256M x 8 |
时钟频率（max） | 800MHZ |
JEDEC DDR3 Compliant
-8n Prefetch Architecture
-Differential Clock(CK/CK )and Data Strobe(DQS/DQS)
-Double-data rate on DQs, DQSandDM
Data Integrity
-AutoSelf Refresh (ASR)by DRAM built
-inTS-Auto Refreshand Self Refresh Modes
Power Saving Mode
-Partial Array Self Refresh (PASR)1
-Power Down Mode
Signal Integrity
-Configurable DS for system compatibility
-ConfigurableOn-Die Termination
-ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ±1%)
Signal Synchronization
-Write Leveling via MR settings6
-Read Leveling via MPR
Interface and Power Supply
-SSTL_15 for DDR3:VDD/VDDQ=1.5V(±0.075V)
-SSTL_1353for DDR3L:VDD/VDDQ=1.35V(-0.067/+0.1V
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