全新原装 NT5AD512M16C4-HR DDR4
制造商 | NANYA |
类别 | 动态随机存储器 |
产品种类 | DRAM DDR4 |
RoHS | 是 |
容量 | 8G |
封装 / 箱体 | FBGA-96 |
工作温度 | 0°C to 95°C |
封装尺寸 | 7.50 x 13.00x0.8mm |
架构 | 512M x 16 |
工作电压 | 1.2V/1.2V/2.5V |
速度 | 2666Mbps |
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM Access Bandwidth
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings1
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Databus Write CRC
- MPR readout
- Boundary Scan (X16)
- Post Package Repair
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Addressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 Ω ± 1%)
Power Saving & Efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low-power Auto Self Refresh (LPASR)
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