全新原装 K4T1G164QJ-BCF7T00 DDR2
制造商 | SAMSUNG |
类别 | 集成电路（IC） 存储器 |
产品种类 | DDR2 SDRAM |
RoHS | 是 |
容量 | 1 GB J-die |
封装 / 箱体 | FBGA 84 |
架构 | 64M x 16 |
速度 | 1066 Mbps |
电压 | 1.8V |
工作温度 | 0 ~ 85 °C |
系列 | K4T1G164QJ |
无铅/环保 | 无铅/环保 |
The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks or8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves highspeed double-data-rate transfer rates of up to 1066Mb/sec/pin (DDR2-1066) for general applications.The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency- 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with apair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank addressinformation in a RAS/CAS multiplexing style. For example, 1Gb(x8) devicereceive 14/10/3 addressing.The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supplyand 1.8V ± 0.1V VDDQ.The 1Gb DDR2 device is available in 60ball FBGA(x8) and in 84ballFBGA(x16).
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