全新原装 IS43QR85120B-083RBLI
制造商 | ISSI |
产品种类 | 动态随机存取存储器 |
RoHS | 是 |
安装风格 | SMD/SMT |
封装 / 箱体 | FBGA-78 |
数据总线宽度 | 8 bit |
存储容量 | 4 Gbit |
（max）时钟频率 | 1.2 GHz |
电源电压 | 1.14 V to 1.26 V |
工作温度 | - 40 C to + 95 C |
Standard Voltage : VDD = VDDQ = 1.2V, VPP=2.5V
High speed data transfer rates with system frequency up to 2666 Mbps
Data Integrity
- Auto Self Refresh (ASR) by DRAM built-in TS
- Auto Refresh and Self Refresh Modes
DRAM access bandwidth
- Separated IO gating structures by Bank Groups
- Self Refresh Abort
- Fine Granularity Refresh
Signal Synchronization
- Write Leveling via MR settings
- Read Leveling via MPR
Reliability & Error Handling
- Command/Address Parity
- Data bus Write CRC
- MPR readout
- Boundary Scan (x16 only)
Speed Grade (CL-TRCD-TRP)
- 2400Mbps
- 2666Mbps/ 18-18-18 (-075U)/ 16-16-16 (-083R)
Signal Integrity
- Internal VREFDQ Training
- Read Preamble Training
- Gear Down Mode
- Per DRAM Adressability
- Configurable DS for system compatibility
- Configurable On-Die Termination
- Data bus Inversion (DBI)
- ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%)
Power Saving and efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low power Auto Self Refresh (LPASR)
Operating Temperature
- Commercial (Tc = 0 oC to +95 oC)
- Industrial (Tc = -40 oC to +95oC)
- Automotive A1 (Tc = - 40 oC to +95 oC)
- Automotive A2 (Tc = - 40 oC to +105 oC)
- Automotive A3 (Tc = - 40 oC to +125 oC)
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