MT53E256M32D2DS-053 WT:B 全新原装 的描述：
The 4Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speedCMOS, dynamic random-access memory. The device is internally configured with x16I/O, 8-banks.Each of the x16’s 536,870,912-bit banks is organized as 32,768 rows by 1024 columns by16 bits.
MT53E256M32D2DS-053 WT:B 全新原装 的特征：
Ultra-low-voltage core and I/O power supplies
– VDD1 = 1.70–1.95V; 1.80V nominal
– VDD2 = 1.06–1.17V; 1.10V nominal
– VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal
Frequency range
– 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
16n prefetch DDR architecture
8 internal banks per channel for concurrent operation
Single-data-rate CMD/ADR entry
Bidirectional/differential data strobe per byte lane
Programmable READ and WRITE latencies (RL/WL)
Programmable and on-the-fly burst lengths (BL = 16, 32)
Directed per-bank refresh for concurrent bank operation and ease of command scheduling
Up to 8.5 GB/s per die
On-chip temperature sensor to control self refresh rate
Partial-array self refresh (PASR)
Selectable output drive strength (DS)
Clock-stop capability
RoHS-compliant, “green” packaging
Programmable VSS (ODT) termination
MT53E256M32D2DS-053 WT:B 全新原装 的描述：
制造商 | Micron Technology |
产品种类 | 动态随机存取存储器 |
RoHS | 是 |
数据总线宽度 | 32 bit |
安装风格 | SMD/SMT |
存储容量 | 8 Gbit |
系列 | MT53E |
湿度敏感性 | Yes |
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